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L8050PLT1 - Leshan Radio Company

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L8050PLT1 General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar type. ƽPNP complement: L8550 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8050PLT1 80P 3000/Tape&Reel L8050PLT1G 80P (Pb-Free) 3000/Tape&Reel L8050QL.

Features

-55 to +150 °C/W °C L8050
*LT1 3 1 2 SOT
  –23 COLLECTOR 3 1 BASE 2 EMITTER L8050
*LT1
  –1/3 LESHAN RADIO COMPANY, LTD. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Typ Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100µΑ) Collector-Base Breakdown Voltage (IC=100µΑ) Collector Cutoff Current (VCB=35V) Emitter Cutoff Current (VEB=4V) V(BR)CEO V(BR)EBO V(BR)CBO ICBO IEBO 25 5 40
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  – ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min Typ ON .

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