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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar type. ƽNPN complement: L8050H ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MA.
ate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient Junction and Storage Temperature
1. FR
–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCEO VCBO VEBO
IC
Max 25 40 5 1500
Unit V V V
mAdc
Symbol PD
R θJ A PD
R θJ A T j,T St g
Max
Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.4 mW/°C
417 -55 to +150
°C/W °C
L8050HQLTIG Series
S-L8050HQLTIG Series
3
1 2
SOT
–23
COLLECTOR 3
1 BASE
2 EMITTER
Rev.A 1/3
LESHAN RADIO COMPANY, LTD.
L8050HQLT.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | L8050HPLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 2 | L8050HQLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | L8050HQLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | L8050HRLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | L8050HRLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 6 | L8050HSLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 7 | L8050HSLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 8 | L8050 |
LRC |
TO-92 Plastic-Encapsulate Transistors |
|
| 9 | L8050 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 10 | L8050M |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 11 | L8050PLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 12 | L8050PLT1G |
Leshan Radio Company |
General Purpose Transistors |
|