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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. S-L2SA812QLT1G Series ƽNPN complement: L2SC1623 ƽWe declare that the material of product compliance with RoHS requirements. 3 ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change R.
CHARATEERISTICS -150 mAdc Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA Tj ,Tstg Max 200 1.8 556 200 2.4 417 -55 to +150 Unit mW mW/oC oC/W mW mW/oC oC/W oC Rev.O 1/5 LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series S-L2SA812QLT1G Series ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max OFF CHAR.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | L2SA812SLT1 |
Leshan Radio Company |
General Purpose Transistors |
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| 2 | L2SA812SLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | L2SA812QLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | L2SA812QLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | L2SA812QLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 6 | L2SA812RLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 7 | L2SA812RLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 8 | L2SA812RLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 9 | L2SA1036KPLT1 |
Leshan Radio Company |
Medium Power Transistor |
|
| 10 | L2SA1036KQLT1 |
Leshan Radio Company |
Medium Power Transistor |
|
| 11 | L2SA1036KQLT1G |
Leshan Radio Company |
Medium Power Transistor |
|
| 12 | L2SA1036KRLT1 |
Leshan Radio Company |
Medium Power Transistor |
|