Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Free Package is available. www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SA812QLT1 M8 3000/Tape&Reel L2SA812QLT1G L2SA812RLT1 M8 (Pb-Free) M6 3000/Tape&Reel 3000/T.
Storage Temperature
PD
R θJA Tj ,Tstg
200 2.4 417 -55 to +150
L2SA812
*LT1
3 1
2 SOT-23
1 BASE
3 COLLECTOR
2 EMITTER
Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC
L2SA812-1/5
LESHAN RADIO COMPANY, LTD.
L2SA812
*LT1
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage www.DataSheet4U.com (IE=-50 µΑ ) Collector-Base Breakdown Voltage (IC=-50 µA) Collector Cutoff Current (VCB=-50V)
Emitter Cutoff Current (VBE=-6V)
V(BR)CEO V(BR)EBO V(BR)CBO
-50 -6 -60
ICBO .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | L2SA812SLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 2 | L2SA812SLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | L2SA812QLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | L2SA812QLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | L2SA812QLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 6 | L2SA812RLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 7 | L2SA812RLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 8 | L2SA812RLT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 9 | L2SA1036KPLT1 |
Leshan Radio Company |
Medium Power Transistor |
|
| 10 | L2SA1036KQLT1 |
Leshan Radio Company |
Medium Power Transistor |
|
| 11 | L2SA1036KQLT1G |
Leshan Radio Company |
Medium Power Transistor |
|
| 12 | L2SA1036KRLT1 |
Leshan Radio Company |
Medium Power Transistor |
|