KTD2061 - Inchange Semiconductor

KTD2061 Silicon NPN Power Transistors

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 0.5A, IB= 50mA) ·Complement to Type KTB1369 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High Voltage application ·TV, monitor vertical output application ·Driver stage applicatio.

Features

SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.4A; VCE= 10V fT Current-Gain—Bandwidth Product IC= 0.4A; VCE= 10V  hFE Classification O Y 70-140 120-240 KTD2061 MIN TYP. MAX UNIT 180 V 1.0 V 1.0 V 1.0 μA 1.0 μA 70 240 100 MHz NOTICE： ISC reserves the rights to make changes of the content.