·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector Power Dissipation : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type KTB1366 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier ap.
ified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 60V; IE=0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE DC Current Gain IC= 500mA ; VCE= 5V hFE Classifications O Y GR 60-120 100-200 150-300 KTD2058 MIN TYP. MAX UNIT 60 V 1.0 V 1.0 V 100 μA 0.1 mA 60 300 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notificatio.
Elektronische Bauelemente KTD2058 3A, 60V P Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” sp.
SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Saturati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KTD2059 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
2 | KTD2059 |
KEC |
TRIPLE DIFFUSED NPN TRANSISTOR | |
3 | KTD2060 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
4 | KTD2060 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
5 | KTD2060 |
KEC |
TRIPLE DIFFUSED NPN TRANSISTOR | |
6 | KTD2061 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
7 | KTD2061 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
8 | KTD2066 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
9 | KTD2092 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
10 | KTD2092 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
11 | KTD2150 |
Kinetic |
Programmable Dual Output LCD Bias Power | |
12 | KTD2161 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |