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SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=0.2dB(Typ.). f=(1kHz). Complementary to KTA1266L. (O,Y,GR class) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter.
Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=0.2dB(Typ.). f=(1kHz). Complementary to KTA1266L. (O,Y,GR class) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO Collector Current IC Emitter Current IE Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 60 50 5 150 -150 625 150 -55 150 UNIT V V V mA mA mW L M C KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM M.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KTC3198 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 2 | KTC3198 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 3 | KTC3198 |
Jiangsu Changjiang |
Transistors |
|
| 4 | KTC3198 |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 5 | KTC3198 |
Kexin |
NPN Transistors |
|
| 6 | KTC3198-BL |
Taiwan Semiconductor |
NPN Bipolar Transistor |
|
| 7 | KTC3198-GR |
Taiwan Semiconductor |
NPN Bipolar Transistor |
|
| 8 | KTC3198-O |
Taiwan Semiconductor |
NPN Bipolar Transistor |
|
| 9 | KTC3198-Y |
Taiwan Semiconductor |
NPN Bipolar Transistor |
|
| 10 | KTC3198A |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 11 | KTC3190 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 12 | KTC3190 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|