KTC3190 - KEC

KTC3190 EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF BAND AMPLIFIER APPLICATION. FEATURE ᴌLow Noise Figure : NF=3.5dB(Max.) (f=1MHz). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperat.

Features

CE(sat) IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA Transition Frequency fT VCE=10V, IC=2mA Reverse Transfer Capacitance Cre VCB=10V, IE=0, f=1MHz Collector-Base Time Constant Noise Figure Ccᴌrbb’ NF VCE=10V, IE=-1mA, f=30MHz VCE=10V, IC=1mA, f=1MHz, Rg=50ή Note : hFE Classification R:40ᴕ80 , O:70ᴕ140 , Y:120ᴕ240 MIN. 40 80 - TYP. - 120 2.2 30 MAX. 0.1 1.0 240 0.4 1.0 3.0 50 UNIT ỌA ỌA V V MHz pF pS - 2.0 3.5 dB 1994. 6. 24 Revision No : 0 1/2 KTC3190 y PARAMETERS (Typ.) (COMMON EMITTER VCE=6V, IE=1mA, f=1MHz) CHARACTERISTIC SYMBOL KTC3190-R.