SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE ᴌHigh Power Gain : Gpe=29dB(Typ.) (f=10.7MHz). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCE.
mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA Transition Frequency fT VCE=10V, IC=1mA Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Collector-Base Time Constant Ccᴌrbbᴯ VCE=10V, IE=-1mA, f=30MHz Power Gain Gpe 0 VCC=6V, IE=-1mA, f=10.7MHz (Fig.) Note : hFE Classification R:40ᴕ80 , O:70ᴕ140 , Y:120ᴕ240 MIN. 40 - 100 1.4 10 27 TYP. 2.0 29 MAX. 0.1 1.0 240 0.4 1.0 400 3.2 50 33 UNIT ỌA ỌA V V MHz pF pS dB 1996. 9. 6 Revision No : 1 1/4 Fig. Gpe TEST CIRCUIT INPUT 0.05uF Rg=50Ω 12pF 30pF KTC3192 1T 2 4 OUTPUT RL=50Ω T : 1 - 2 0.1mmΦ UEW 2.
TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features 。 High power gain. / Applications 。 Hig.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3192 TRANSISTOR(NPN) TO-92.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KTC3190 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
2 | KTC3190 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
3 | KTC3191 |
KEC |
NPN TRANSISTOR | |
4 | KTC3193 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
5 | KTC3194 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
6 | KTC3194 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
7 | KTC3197 |
SeCoS |
NPN Transistor | |
8 | KTC3197 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
9 | KTC3198 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
10 | KTC3198 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
11 | KTC3198 |
Jiangsu Changjiang |
Transistors | |
12 | KTC3198 |
SeCoS |
NPN Plastic Encapsulated Transistor |