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SEMICONDUCTOR TECHNICAL DATA KTB1370 TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES High Collector Current : IC=-7A. Low Collector-Emitter Saturation Voltage. : VCE(sat)=-0.5V(Max.) at IC=-4A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitte.
High Collector Current : IC=-7A. Low Collector-Emitter Saturation Voltage. : VCE(sat)=-0.5V(Max.) at IC=-4A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -100 -80 -5 -7 -1 30 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KTB1366 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 2 | KTB1366 |
JCET |
PNP Transistor |
|
| 3 | KTB1366 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 4 | KTB1366 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|
| 5 | KTB1367 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 6 | KTB1367 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|
| 7 | KTB1368 |
GME |
PNP Epitaxial Planar Silicon Transistors |
|
| 8 | KTB1368 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 9 | KTB1368 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 10 | KTB1368 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|
| 11 | KTB1369 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 12 | KTB1369 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
|