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SEMICONDUCTOR TECHNICAL DATA KTB1367 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTD2059. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Diss.
Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTD2059. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -100 -100 -5 -5 -0.5 30 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +.
KTB1367 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Colle.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KTB1366 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 2 | KTB1366 |
JCET |
PNP Transistor |
|
| 3 | KTB1366 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 4 | KTB1366 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|
| 5 | KTB1368 |
GME |
PNP Epitaxial Planar Silicon Transistors |
|
| 6 | KTB1368 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 7 | KTB1368 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 8 | KTB1368 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|
| 9 | KTB1369 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 10 | KTB1369 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 11 | KTB1370 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|
| 12 | KTB1124 |
GME |
PNP Silicon Epitaxial Planar Transistor |
|