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SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTD1691. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse * Base Current VCBO VCEO VEBO IC ICP IB Collector P.
High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTD1691.
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
*
Base Current
VCBO VCEO VEBO
IC ICP IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
* PW 10ms, Duty Cycle 50%
RATING -60 -60 -7 -5 -8 -1 1.5 20 150
-55 150
UNIT V V V
A
A
W
KTB1151
EPITAXIAL PLANAR PNP TRANSISTOR
A B C
H J K
D E
F G
L
M
N
O P
12 3
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C D E F G H J K L .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KTB1124 |
GME |
PNP Silicon Epitaxial Planar Transistor |
|
| 2 | KTB1124 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 3 | KTB1124 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 4 | KTB1234T |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 5 | KTB1241 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 6 | KTB1260 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 7 | KTB1366 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 8 | KTB1366 |
JCET |
PNP Transistor |
|
| 9 | KTB1366 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 10 | KTB1366 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|
| 11 | KTB1367 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 12 | KTB1367 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|