KT863A - Inchange Semiconductor

KT863A Silicon NPN Power Transistors

·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=5A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

Features

own Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.25A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 2V hFE-2 DC Current Gain IC= 5A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V KT863A MIN TYP. MAX UNIT 30 V 50 V 5 V 0.4 V 100 μA 100 μA 70 280 30 10 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The .