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KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) Ï Ï• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47 , R2=47 ) • Complement to KSR1004 ÎABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Volta.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSR2001 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) |
|
| 2 | KSR2001 |
Fairchild Semiconductor |
Switching Application |
|
| 3 | KSR2002 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) |
|
| 4 | KSR2002 |
Fairchild Semiconductor |
Switching Application |
|
| 5 | KSR2003 |
Fairchild Semiconductor |
Switching Application |
|
| 6 | KSR2005 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) |
|
| 7 | KSR2005 |
Fairchild Semiconductor |
Switching Application |
|
| 8 | KSR2006 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) |
|
| 9 | KSR2007 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) |
|
| 10 | KSR2007 |
Fairchild Semiconductor |
Switching Application |
|
| 11 | KSR2008 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) |
|
| 12 | KSR2009 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) |
|