KSR2003 KSR2003 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to KSR1003 1 TO-92 1. Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise not.
Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC= -5mA VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100µA VCE= -0.3V, IC= -5mA 15 0.9 22 1 -0.5 -3.0 29 1.1 200 5.5 70 -0.3 V MHz pF V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 KSR2003 Typical Characteristics -1000 -100 VCE = - 5V R1 = 22K R2 = 22K VCE = - 0.3V R1 = 22 K R2 = 22 K VI(on)[V], INPUT VOLTAGE -1 -10 -100 -1000 hFE, DC CURRENT GAIN -10 -100 -1 -10 -0.1 -0.1 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSR2001 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
2 | KSR2001 |
Fairchild Semiconductor |
Switching Application | |
3 | KSR2002 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
4 | KSR2002 |
Fairchild Semiconductor |
Switching Application | |
5 | KSR2004 |
Samsung semiconductor |
PNP Epitaxial Silicon Transistor | |
6 | KSR2005 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
7 | KSR2005 |
Fairchild Semiconductor |
Switching Application | |
8 | KSR2006 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
9 | KSR2007 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
10 | KSR2007 |
Fairchild Semiconductor |
Switching Application | |
11 | KSR2008 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) | |
12 | KSR2009 |
Samsung semiconductor |
PNP (SWITCHING APPLICATION) |