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·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Electrically similar to popular TIP31C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier low speed switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .
A; IB= 0
VCE(sat)
* VBE(on)
*
ICBO
Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current
IC= 3A; IB= 375mA IC= 3A; VCE=4V VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE1
* hFE2
*
DC Current Gain DC Current Gain
IC= 1A; VCE= 4V IC= 3A; VCE= 4V
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= 0.5A; VCE= 10V
KSH31C
MIN
TYP MAX UNIT
100
V
1.2
V
1.8
V
20
uA
1.0
mA
25
10
50
3
MHz
isc website：www.iscsemi.com
2 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
Outline Drawing
K.
KSH31C - Fairchild Semiconductor
KSH31/31C KSH31/31C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Applicat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSH31 |
Fairchild Semiconductor |
NPN Transistor |
|
| 2 | KSH30 |
Fairchild Semiconductor |
PNP Transistor |
|
| 3 | KSH3055 |
Fairchild Semiconductor |
PNP Transistor |
|
| 4 | KSH3055 |
INCHANGE |
NPN Transistor |
|
| 5 | KSH30A20 |
Nihon Inter Electronics |
SBD |
|
| 6 | KSH30A20 |
Kyocera |
Schottky Barrier Diode |
|
| 7 | KSH30A20B |
Nihon Inter Electronics |
SBD |
|
| 8 | KSH30C |
Fairchild Semiconductor |
PNP Transistor |
|
| 9 | KSH32 |
Fairchild Semiconductor |
PNP Transistor |
|
| 10 | KSH32C |
Fairchild Semiconductor |
PNP Transistor |
|
| 11 | KSH32C |
INCHANGE |
PNP Transistor |
|
| 12 | KSH340 |
Fairchild Semiconductor |
NPN Transistor |
|