KSH31 - Fairchild Semiconductor

KSH31 NPN Transistor

KSH31/31C KSH31/31C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise no.

Features

H31C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage Current Gain Bandwidth Product VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A IC = 3A, IB = 375mA VCE = 4A, IC = 3A VCE = 10V, IC = 500mA 3 25 10 20 20 1 50 1.2 1.8 V V MHz µA µA mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 50 µA µA Test Condition IC = 30mA, IB = 0 Min. 40 100 Max. Units V V ICEO
* Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002 KSH31/31C T.