KSD880W - INCHANGE

KSD880W NPN Transistor

·Complement to KSB834W ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collec.

Features

Cutoff Current VEB= 7V; IC= 0 hFE1 DC Current Gain hFE2 DC Current Gain IC= 0.5A; VCE= 5V IC= 3A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V Cob Collector output capacitance VCB=10V ,IE=0,f=1MHz MIN TYP MAX UNIT 1 V 1 V 100 μA 100 μA 60 200 20 9 MHz 150 pF  hFE-1 Classifications O Y 60-120 100-200 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for .