KSD880 - Fairchild Semiconductor

KSD880 Low Frequency Power Amplifier

KSD880 KSD880 Low Frequency Power Amplifier • Complement to KSB834 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector D.

Features

= 5V, IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, IE = 0, f = 1MHz VCC = 30V, IC = 1A IB1 = - IB2 = 0.2A RL = 30Ω 60 60 20 0.4 0.7 3 70 0.8 1.5 0.8 300 1 1 V V MHz pF µs µs µs Min. Typ. Max. 100 100 Units µA µA V hFE Classification Classification hFE1 O 60 ~ 120 Y 100 ~ 200 G 150 ~ 300 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD880 Typical Characteristics 4 1000 IC[A], COLLECTOR CURRENT IB = 50mA IB = 40mA 2 hFE, DC CURRENT GAIN 3 IB = 90mA IB = 80mA IB = 70mA IB = 60mA VCE = 5V IB = 30mA IB = 20mA IB = 10mA 100 1 IB = 0 0 0 2 4 6 8 10 0.01 0.1 1 10 VCE.