KSD363 - Fairchild Semiconductor

KSD363 NPN Transistor

KSD363 KSD363 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=300V • Collector Current : IC=6A • Collector Dissipation : PC=40W(TC=25°C) TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Col.

Features

= 0 VCE = 5V, IC = 1A IC = 1A, IB = 0.1A IC = 1A, IB = 0.1A VCE = 5V, IC = 0.5A 10 40 Min. 300 120 8 1 240 1 1.5 V V MHz Typ. Max. Units V V V mA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD363 Typical Characteristics 5 1000 IC[A], COLLECTOR CURRENT 4 3 IB = 25mA 2 hFE, DC CURRENT GAIN IB = 50mA IB = 45mA IB = 40mA IB = 35mA IB = 30mA VCE = 5V 100 IB = 20mA IB = 15mA 1 IB = 10mA IB = 5mA 0 0 4 8 12 16 20 10 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CU.