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KSD363 |
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| Part Number | KSD363 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
| Features |
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 250V; IE= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
120
V
300
V
8
V
1.0
V
1.5
V
1.0 mA
40
240
10
MHz
hFE Classifications R O Y 40-80 70-140 120-240 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at a... |
| Document |
 KSD363 Data Sheet
PDF 210.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSD362 |
Samsung semiconductor |
NPN (B/W TV HORIZONTAL DEFLECTION OUTPUT) |
|
| 2 | KSD362 |
Fairchild Semiconductor |
B/W TV Horizontal Deflection Output |
|
| 3 | KSD362 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | KSD362 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor |
|
| 5 | KSD363 |
Fairchild Semiconductor |
NPN Transistor |
|