KSC5027F KSC5027F High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Coll.
Gain Bandwidth Product Turn On Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.2A VCC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200Ω 60 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA hFE Classification Classification hFE1 N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 ©2002 Fairchild Semiconductor Corporation.
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Min.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSC5027 |
ON Semiconductor |
NPN Silicon Transistor | |
2 | KSC5027 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
3 | KSC5027 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | KSC5027 |
INCHANGE |
NPN Transistor | |
5 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
6 | KSC5020 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
7 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
8 | KSC5021 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
9 | KSC5021 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
10 | KSC5021 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | KSC5021F |
INCHANGE |
NPN Transistor | |
12 | KSC5021F |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |