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KSC5027F |
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| Part Number | KSC5027F |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
Collector-Emitter Sustaining Voltage IC= 1.5A; IB= 0.3A
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.2A; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
hFE-1 Classifications K L M 10~20 15~30 20~40 KSC... |
| Document |
 KSC5027F Data Sheet
PDF 211.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSC5027 |
ON Semiconductor |
NPN Silicon Transistor |
|
| 2 | KSC5027 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | KSC5027 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | KSC5027 |
INCHANGE |
NPN Transistor |
|
| 5 | KSC5027F |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|