KSA1625 KSA1625 High Voltage Switch • High Breakdown Voltage • High Speed Switching 1 TO-92 1. Emitter 2. Collector 3. Base PNP Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IB IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Cur.
ion IC= -1mA, IB=0 VCB= -400V, IE=0 VEB= -5V, IC=0 VCE= -5V, IC= -50mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -10V, IC= -10mA VCB= -10V, f=1MHz IC= -100mA, RL=1.5kΩ IB1=- IB2= -10mA VCC= -150V 10 25 1 5 1 40 Min. -400 Max. -1 -1 200 -1 -1.2 V V MHz pF µs µs µs Units V µA µA hFE Classification Classification hFE M 40 ~ 80 L 60 ~ 120 K 100 ~ 200 ©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 KSA1625 Typical Characteristics -0.5 1000 VCE= - 5V IC[A], COLLECTOR CURRENT -0.4 A I B=-200m I B=-180mA hFE, DC CURRENT GAIN IB=-160mA -0.3 IB=-140mA IB=-120mA IB=-100m.
UTC KSA1625 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSA1614 |
Fairchild Semiconductor |
Low Frequency Power Amplifier Power Regulator | |
2 | KSA1614 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | KSA1614 |
Inchange Semiconductor |
Power Transistor | |
4 | KSA1010 |
Fairchild Semiconductor |
High Speed High Voltage Switching | |
5 | KSA1013 |
Samsung semiconductor |
PNP Silicon Transistor | |
6 | KSA1013 |
Fairchild Semiconductor |
PNP Silicon Transistor | |
7 | KSA1013 |
ON Semiconductor |
PNP Epitaxial Silicon Transistor | |
8 | KSA1015 |
ON Semiconductor |
PNP Epitaxial Silicon Transistor | |
9 | KSA1015 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
10 | KSA1142 |
Fairchild Semiconductor |
PNP Transistor | |
11 | KSA1142 |
INCHANGE |
PNP Transistor | |
12 | KSA1150 |
Fairchild Semiconductor |
Low Frequency Power Amplifier |