·With TO-220F package ·Collector-base voltage: VCBO=-80V ·Collector dissipation: PC=20W(TC=25 ) APPLICATIONS ·Power regulator ·Low frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage .
-off current DC current gain CONDITIONS IC=-10mA ; IB=0 IC=-500µA ; IE=0 IE=-500µA ; IC=0 IC=-1A ;IB=-0.1A VCB=-50V; IE=0 IC=-0.5A ; VCE=-5V 40 MIN -55 -80 -5 www.datasheet4u.com KSA1614 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO hFE TYP. MAX UNIT V V V -0.15 -0.5 -50 240 V µA hFE Classifications R 40-80 O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE www.datasheet4u.com KSA1614 Fig.2 Outline dimensions 3 .
·With TO-220F package ·Collector-base voltage: VCBO=-80V ·Collector dissipation: PC=20W(TC=25℃) APPLICATIONS ·Power regu.
KSA1614 KSA1614 Low Frequency Power Amplifier Power Regulator • Collector-Base Voltage : VCBO = - 80V • Collector Dissi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSA1625 |
Fairchild Semiconductor |
High Voltage Switch | |
2 | KSA1625 |
UTC |
HIGH VOLTAGE TRANSISTOR | |
3 | KSA1010 |
Fairchild Semiconductor |
High Speed High Voltage Switching | |
4 | KSA1013 |
Samsung semiconductor |
PNP Silicon Transistor | |
5 | KSA1013 |
Fairchild Semiconductor |
PNP Silicon Transistor | |
6 | KSA1013 |
ON Semiconductor |
PNP Epitaxial Silicon Transistor | |
7 | KSA1015 |
ON Semiconductor |
PNP Epitaxial Silicon Transistor | |
8 | KSA1015 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
9 | KSA1142 |
Fairchild Semiconductor |
PNP Transistor | |
10 | KSA1142 |
INCHANGE |
PNP Transistor | |
11 | KSA1150 |
Fairchild Semiconductor |
Low Frequency Power Amplifier | |
12 | KSA1156 |
Fairchild Semiconductor |
PNP Transistor |