KSA1281 KSA1281 Audio Power Amplifier • Collector Power Dissipation : PC=1W • 3 Watt Output Application 1 TO-92L 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle.
IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -500mA VCE= -2V, IC= -1.5A IC= -1A, IB= -0.05mA IC= -1A, IB= -0.05mA VCB= -10V, IE=0, f=1MHz VCE= -2V, IC= -500mA 40 100 70 40 Min. -50 -50 -5 -100 -100 240 -1.2 -0.5 V V pF MHz Typ. Max. Units V V V nA nA hFE1 Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA1281 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1400 IB = -7mA IC[mA], COLLECTOR CURRENT -1200 IB = -6mA -1000 -1 IB = -5mA -800 IB = -4mA -600 IC = 50IB Ta = 25 C -0.1 o IB = -3mA -400 IB = -.
98AON14058G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSA1201 |
Fairchild Semiconductor |
Power Amplifier | |
2 | KSA1203 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
3 | KSA1220 |
Fairchild Semiconductor |
PNP Transistor | |
4 | KSA1220 |
INCHANGE |
PNP Transistor | |
5 | KSA1220A |
Fairchild Semiconductor |
PNP Transistor | |
6 | KSA1220A |
INCHANGE |
PNP Transistor | |
7 | KSA1241 |
Fairchild Semiconductor |
Power Amplifier Applications | |
8 | KSA1242 |
Fairchild Semiconductor |
Medium Power Amplifier Camera Flash Applications | |
9 | KSA1243 |
Fairchild Semiconductor |
Power Amplifier Applications | |
10 | KSA1244 |
Fairchild Semiconductor |
High Current Switching | |
11 | KSA1298 |
Samsung semiconductor |
PNP (LOW FREQUENCY AMPLIFIER) | |
12 | KSA1298 |
Fairchild Semiconductor |
Low Frequency Power Amplifier |