KSA1201 - Fairchild Semiconductor

KSA1201 Power Amplifier

KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board Complement to KSC2881 1 SOT-89 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC* TJ TSTG Parameter.

Features

width Product Output Capacitance Test Condition IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -120V, IE=0 VBE= -5V, IC=0 VCE= -5V, IC= -100mA IC= -500mA, IB=-50mA VCE= -5V, IC= -500mA VCE= -5V, IC= -100mA VCB= -10V, IE=0, f=1MHz 120 30 80 Min. -120 -5 -100 -100 240 -1.0 -1.0 V V MHz pF Typ. Max. Units V V nA nA hFE Classification Classification hFE O 80 ~ 160 Marking Y 120 ~ 240 SDX hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1201 Typical Characteristics -0.8 1000 IB =-10mA IB =-7mA VCE = -5V IC[A], COLLECTOR CURRENT IB =-4mA -0.4 hFE, DC CURRENT GAIN -0.