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SMD Type Transistors NPN Transistors KRC110S ~ KRC114S ■ Features ● With Built in Bias Resistors ● Simplify Circuit Design ● Reduce a Quantity of Parts and Manufaturing Process ● Digital Transistors C R1 B +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.
● With Built in Bias Resistors
● Simplify Circuit Design
● Reduce a Quantity of Parts and Manufaturing Process
● Digital Transistors
C
R1 B
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01
1.Base 2.Emitter 3.collector
0-0.1 +0.10.38
-0.1
E
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC PC.
KRC114S - Korea Electronics
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ᴌWith Bui.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KRC114 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 2 | KRC114M |
Korea Electronics |
(KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 3 | KRC110 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 4 | KRC110M |
Korea Electronics |
(KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 5 | KRC110S |
Kexin |
NPN Transistors |
|
| 6 | KRC110S |
Korea Electronics |
(KRC110S - KRC114S) EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 7 | KRC111 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 8 | KRC111M |
Korea Electronics |
(KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 9 | KRC111S |
Kexin |
NPN Transistors |
|
| 10 | KRC111S |
Korea Electronics |
(KRC110S - KRC114S) EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 11 | KRC112 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 12 | KRC112M |
Korea Electronics |
(KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR |
|