SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B E L M C KRC110~KRC114 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B .
With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B E L M C KRC110~KRC114 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SY.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KRC110 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
2 | KRC110M |
Korea Electronics |
(KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR | |
3 | KRC110S |
Kexin |
NPN Transistors | |
4 | KRC110S |
Korea Electronics |
(KRC110S - KRC114S) EPITAXIAL PLANAR PNP TRANSISTOR | |
5 | KRC111 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
6 | KRC111M |
Korea Electronics |
(KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR | |
7 | KRC111S |
Kexin |
NPN Transistors | |
8 | KRC111S |
Korea Electronics |
(KRC110S - KRC114S) EPITAXIAL PLANAR PNP TRANSISTOR | |
9 | KRC112 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
10 | KRC112M |
Korea Electronics |
(KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR | |
11 | KRC112S |
Kexin |
NPN Transistors | |
12 | KRC112S |
Korea Electronics |
(KRC110S - KRC114S) EPITAXIAL PLANAR PNP TRANSISTOR |