KMM5362203C2W DRAM MODULE Datasheet

KMM5362203C2W DRAM MODULE

The Samsung KMM5362203C2W is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203C2W consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted and two CMOS 1Mx4bit Quad CAS DRAM in 24-pin SOJ package on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. Th.

Features

• Part Identification - KMM5362203C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5362203C2WG(1024 cycles/16ms Ref, SOJ, Gold)
• Fast Page Mode Operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single +5V ±10% power supply
• JEDEC standard PDPin & pinout
• PCB : Height(750mil), double sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 15ns 15ns tRC 90ns 110ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 D.

No.	Partie #	Fabricant	Description
1	KMM5362205C2W	Samsung Semiconductor	DRAM MODULE
2	KMM5362000A1	Samsung Electronics	2M x 36 DRAM SIMM Memory Module
3	KMM5362000A1G	Samsung Electronics	2M x 36 DRAM SIMM Memory Module
4	KMM5362000B	Samsung Electronics	2M x 36 DRAM SIMM Memory Module
5	KMM5362000B2	Samsung Electronics	2M x 36 DRAM SIMM Memory Module
6	KMM5362000B2G	Samsung Electronics	2M x 36 DRAM SIMM Memory Module
7	KMM5362000BG	Samsung Electronics	2M x 36 DRAM SIMM Memory Module
8	KMM5362000BH	Samsung Electronics	2M x 36 DRAM SIMM Memory Module
9	KMM5362003	Samsung Electronics	2M x 36 DRAM SIMM Memory Module
10	KMM5362003G	Samsung Electronics	2M x 36 DRAM SIMM Memory Module
11	KMM5361203C2W	Samsung Semiconductor	1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
12	KMM5361205C2W	Samsung Semiconductor	1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

KMM5362203C2W - Samsung Semiconductor

KMM5362203C2W DRAM MODULE

Features

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