KMM5361205C2W - Samsung Semiconductor

KMM5361205C2W 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module. The Samsung KMM5361205C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each.

Features

• Part Identification - KMM5361205C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5361205C2WG(1024 cycles/16ms Ref, SOJ, Gold)
• Fast Page Mode with Extended Data Out
• CAS-before-RAS refresh capability
• RAS-only and hidden refresh capability
• TTL compatible inputs and outputs
• Single +5V ±10% power supply
• JEDEC standard PDPin & pinout
• PCB : Height(750mil), single sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 15ns 17ns tRC 90ns 110ns tHPC 25ns 30ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35.