The Samsung KMM53616004C is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004C consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53616004C is a Single In-lin.
• Part Identification - KMM53616004CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53616004CKG(4K cycles/64ms Ref, SOJ, Gold)
• Hyper Page Mode Operation
• CAS-before-RAS & Hidden Refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V ±10% power supply
• JEDEC standard PDpin & pinout
• PCB : Height(1250mil), double sided component
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
13ns 15ns
tRC
84ns 104ns
tHPC
20ns 25ns
PIN CONFIGURATIONS
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KMM53616004BK |
Samsung Semiconductor |
DRAM MODULE | |
2 | KMM53616000BK |
Samsung Semiconductor |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1 | |
3 | KMM53616000CK |
Samsung Semiconductor |
DRAM MODULE | |
4 | KMM5361203C2W |
Samsung Semiconductor |
1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas | |
5 | KMM5361205C2W |
Samsung Semiconductor |
1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo | |
6 | KMM5362000A1 |
Samsung Electronics |
2M x 36 DRAM SIMM Memory Module | |
7 | KMM5362000A1G |
Samsung Electronics |
2M x 36 DRAM SIMM Memory Module | |
8 | KMM5362000B |
Samsung Electronics |
2M x 36 DRAM SIMM Memory Module | |
9 | KMM5362000B2 |
Samsung Electronics |
2M x 36 DRAM SIMM Memory Module | |
10 | KMM5362000B2G |
Samsung Electronics |
2M x 36 DRAM SIMM Memory Module | |
11 | KMM5362000BG |
Samsung Electronics |
2M x 36 DRAM SIMM Memory Module | |
12 | KMM5362000BH |
Samsung Electronics |
2M x 36 DRAM SIMM Memory Module |