SEMICONDUCTOR TECHNICAL DATA High frequency rectification. Switching power supply. FEATURES Low Forward Voltage : VF max=0.55V. IO=500mA recification possible. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive peak surge current Junction Temperature Storage Temperature SYMBOL RATIN.
Low Forward Voltage : VF max=0.55V. IO=500mA recification possible. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive peak surge current Junction Temperature Storage Temperature SYMBOL RATING VRRM VR IO 40 40 0.5 IFSM 3 Tj 125 Tstg -55 125 UNIT V V A A KDR400S SCHOTTKY BARRIER TYPE DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KDR411 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
2 | KDR411S |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
3 | KDR412 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
4 | KDR105 |
KEC |
Diode | |
5 | KDR105S |
KEC |
Diode | |
6 | KDR322 |
KEC |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE | |
7 | KDR331 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
8 | KDR331E |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
9 | KDR331V |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
10 | KDR357 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
11 | KDR367 |
KEC |
DIODE | |
12 | KDR367E |
KEC |
SCHOTTKY BARRIER TYPE DIODE |