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K6F1016U4B Family Preliminary CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date May 2, 2000 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specification.
• Process Technology: Full CMOS
• Organization: 64K x16 bit
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three state output status and TTL Compatible
• Package Type: 48-FBGA-6.00x7.00
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6F1016U4B-F Industrial(-40~85°C) 1. The parameter i.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F1008R2M |
Samsung Electronics |
SRAM |
|
| 2 | K6F1008S2M |
Samsung Electronics |
SRAM |
|
| 3 | K6F1008V2C |
Samsung semiconductor |
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
|
| 4 | K6F1008V2M |
Samsung Electronics |
SRAM |
|
| 5 | K6F1616R6A |
Samsung semiconductor |
CMOS SRAM |
|
| 6 | K6F1616R6C |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 7 | K6F1616T6B |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 8 | K6F1616T6B-EF55 |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 9 | K6F1616T6B-EF70 |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 10 | K6F1616T6B-F |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 11 | K6F1616T6B-TF55 |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 12 | K6F1616T6B-TF70 |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|