K4M64163PK 1M x 16Bit x 4 Banks Mobile SDRAM Datasheet

K4M64163PK 1M x 16Bit x 4 Banks Mobile SDRAM

The K4M64163PK is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock, and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable bur.

Features

• 1.8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
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• 64ms refresh peri.

No.	Partie #	Fabricant	Description
1	K4M64163PH	Samsung semiconductor	1M x 16Bit x 4 Banks Mobile SDRAM
2	K4M641633K	Samsung semiconductor	1M x 16Bit x 4 Banks Mobile SDRAM
3	K4M281633F	Samsung	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
4	K4M281633F-C	Samsung	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
5	K4M281633F-F1L	Samsung	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
6	K4M281633F-G	Samsung	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
7	K4M281633F-L	Samsung	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
8	K4M281633F-N	Samsung	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
9	K4M281633F-RE	Samsung	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
10	K4M28163LF	Samsung semiconductor	2M x 16Bit x 4 Banks Mobile SDRAM
11	K4M28163LH	Samsung semiconductor	Mobile SDRAM
12	K4M28163PF	Samsung	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M64163PK - Samsung semiconductor

K4M64163PK 1M x 16Bit x 4 Banks Mobile SDRAM

Features

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