K4M64163PK |
Part Number | K4M64163PK |
Manufacturer | Samsung semiconductor |
Description | The K4M64163PK is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design all... |
Features |
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) • DQM for masking. • Auto refresh. • • • • 64ms refresh peri... |
Document |
K4M64163PK Data Sheet
PDF 141.10KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K4M64163PH |
Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM | |
2 | K4M641633K |
Samsung semiconductor |
1M x 16Bit x 4 Banks Mobile SDRAM | |
3 | K4M281633F |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
4 | K4M281633F-C |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
5 | K4M281633F-F1L |
Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |