The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design make a device controlled precisely with the use of system clock and I/O transactions are possible on every clock cycle. The range of operating frequencies, progra.
• 1.8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
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• 64ms refresh peri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4M56163PE-R |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
2 | K4M56163PE-F1L |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
3 | K4M56163PE-F90 |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
4 | K4M56163PG |
Samsung semiconductor |
4M x 16Bit x 4 Banks Mobile SDRAM | |
5 | K4M561633G |
Samsung semiconductor |
4M x 16Bit x 4 Banks Mobile SDRAM | |
6 | K4M56163LG |
Samsung semiconductor |
2M x 16Bit x 4 Banks Mobile SDRAM | |
7 | K4M563233D |
Samsung |
8Mx32 Mobile SDRAM 90FBGA | |
8 | K4M563233E |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | |
9 | K4M563233G |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | |
10 | K4M56323LE |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | |
11 | K4M56323PG-C |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM | |
12 | K4M56323PG-F |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |