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The K4M563233E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable bur.
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
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• 64ms refresh period (4K cycle). Co.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K4M563233D |
Samsung |
8Mx32 Mobile SDRAM 90FBGA |
|
| 2 | K4M563233G |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 3 | K4M56323LE |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 4 | K4M56323PG-C |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
| 5 | K4M56323PG-F |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
| 6 | K4M56323PG-FE |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
| 7 | K4M56323PG-G |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
| 8 | K4M561633G |
Samsung semiconductor |
4M x 16Bit x 4 Banks Mobile SDRAM |
|
| 9 | K4M56163LG |
Samsung semiconductor |
2M x 16Bit x 4 Banks Mobile SDRAM |
|
| 10 | K4M56163PE-F1L |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|
| 11 | K4M56163PE-F90 |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|
| 12 | K4M56163PE-R |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|