www.DataSheet4U.com Ordering number : ENA0830 2SK4119LS SANYO Semiconductors DATA SHEET 2SK4119LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avala.
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature Avalanche Energy (Single Pulse)
*3 Avalanche Current
*4
*1 Shows chip capability
*2 Package limited
*3 VDD=99V, L=2mH, IAV=21A
*4 L≤2mH, single pulse Marking : K4119
Symbol VDS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4110 |
Toshiba |
2SK4110 | |
2 | K4111 |
Toshiba |
2SK4111 | |
3 | K4112 |
Toshiba |
Field Effect Transistor | |
4 | K4113 |
Toshiba |
Field Effect Transistor Silicon N Channel MOS Type | |
5 | K4115 |
Toshiba Semiconductor |
2SK4115 | |
6 | K4100LS |
Sanyo Semicon Device |
2SK4100LS | |
7 | K4101LS |
Sanyo |
2SK4101LS | |
8 | K4106 |
Toshiba |
2SK4106 | |
9 | K4107 |
Toshiba Semiconductor |
2SK4107 | |
10 | K4108 |
Toshiba Semiconductor |
2SK4108 | |
11 | K412 |
Hitachi |
Silicon N-Channel MOSFET | |
12 | K4123LS |
Sanyo |
2SK4123LS |