www.DataSheet4U.com Ordering number : ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101LS Features • • • • General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. A.
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General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse)
*3 Avalanche Current
*4 Symbol VDSS VGSS IDc
*1 IDpack
*2 IDP PD Tch Tstg EAS IAV Limited only by .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4100LS |
Sanyo Semicon Device |
2SK4100LS | |
2 | K4106 |
Toshiba |
2SK4106 | |
3 | K4107 |
Toshiba Semiconductor |
2SK4107 | |
4 | K4108 |
Toshiba Semiconductor |
2SK4108 | |
5 | K4110 |
Toshiba |
2SK4110 | |
6 | K4111 |
Toshiba |
2SK4111 | |
7 | K4112 |
Toshiba |
Field Effect Transistor | |
8 | K4113 |
Toshiba |
Field Effect Transistor Silicon N Channel MOS Type | |
9 | K4115 |
Toshiba Semiconductor |
2SK4115 | |
10 | K4119LS |
Sanyo Semicon Device |
2SK4119LS | |
11 | K412 |
Hitachi |
Silicon N-Channel MOSFET | |
12 | K4123LS |
Sanyo |
2SK4123LS |