2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm www.Dat.
.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K3662 |
Toshiba Semiconductor |
2SK3662 | |
2 | K3665 |
Panasonic |
2SK3665 | |
3 | K3669 |
Toshiba Semiconductor |
2SK3669 | |
4 | K360 |
Aeroflex |
Silicon Zener Diodes | |
5 | K360 |
Knox Inc |
LOW LEVEL ZENER DIODES | |
6 | K3601G |
Littelfuse |
Multipulse SIDACs | |
7 | K3601GL |
Littelfuse |
Standard Bidirectional SIDAC | |
8 | K3603-01MR |
Fuji Electric |
2SK3603-01MR | |
9 | K3607-01MR |
Fuji |
2SK3607-01MR | |
10 | K3610 |
KODENSHI KOREA CORP |
Photocoupler | |
11 | K3611 |
KODENSHI KOREA CORP |
Photocoupler | |
12 | K3615 |
Sanyo |
2SK3615 |