K3662 - Toshiba Semiconductor

K3662 2SK3662

2SK3662 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 55 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode .

Features

e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Therma.