The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3299 2SK3299-S 2SK3299-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES •Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, I.
a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3299 2SK3299-S 2SK3299-ZJ PACKAGE TO-220AB TO-262 TO-263
FEATURES
•Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
•Gate voltage rating ±30 V
•Low on-state resistance RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 5.0 A)
•Avalanche capability ratings
•Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K3294 |
NEC |
2SK3294 | |
2 | K3296 |
NEC |
MOSFET | |
3 | K3298 |
NEC |
2SK3298 | |
4 | K320 |
Hitachi Semiconductor |
2SK320 | |
5 | K3207EC450 |
IXYS |
Medium Voltage Thyristor | |
6 | K3207EC480 |
IXYS |
Medium Voltage Thyristor | |
7 | K3207EC520 |
IXYS |
Medium Voltage Thyristor | |
8 | K3209 |
Hitachi Semiconductor |
2SK3209 | |
9 | K3216-01 |
Fuji Electric |
2SK3216-01 | |
10 | K3228 |
Hitachi Semiconductor |
2SK3228 | |
11 | K3233 |
Renesas |
2SK3233 | |
12 | K3235 |
Renesas |
2SK3235 |