To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, an.
• Low on-resistance: www.DataSheet4U.com
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• R DS(on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche ratings
Outline
TO
–220CFM
D
G
1 2
3
1. Gate 2. Drain 3. Source
S
2SK3233
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current
www.DataShee.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K3235 |
Renesas |
2SK3235 | |
2 | K3236 |
TOSHIBA |
2SK3236 | |
3 | K320 |
Hitachi Semiconductor |
2SK320 | |
4 | K3207EC450 |
IXYS |
Medium Voltage Thyristor | |
5 | K3207EC480 |
IXYS |
Medium Voltage Thyristor | |
6 | K3207EC520 |
IXYS |
Medium Voltage Thyristor | |
7 | K3209 |
Hitachi Semiconductor |
2SK3209 | |
8 | K3216-01 |
Fuji Electric |
2SK3216-01 | |
9 | K3228 |
Hitachi Semiconductor |
2SK3228 | |
10 | K324 |
ETC |
2SK324 | |
11 | K3255 |
Sanyo |
2SK3255 | |
12 | K3262-01MR |
Fuji Electric |
2SK3262-01MR |