2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3126 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.48 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 450 V) z Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = .
emperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal reverse,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K3128 |
Toshiba Semiconductor |
2SK3128 | |
2 | K3100G |
Champion |
3.3V Crystal Clock Oscillators | |
3 | K3102-01R |
Fuji Semiconductors |
2SK3102-01R | |
4 | K3113 |
NEC |
2SK3113 | |
5 | K3114 |
NEC |
2SK3114 | |
6 | K3115 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
7 | K3115B |
Renesas |
N-CHANNEL POWER MOSFET | |
8 | K3116 |
NEC |
2SK3116 | |
9 | K3140 |
Hitachi Semiconductor |
2SK3140 | |
10 | K3141 |
Renesas |
Silicon N-Channel MOS FET | |
11 | K3142 |
Hitachi Semiconductor |
2SK3142 | |
12 | K3148 |
Hitachi Semiconductor |
2SK3148 |