The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3113 TO-251 (MP-3) 2SK3113-Z TO-252 (MP-3Z) FEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 1.
a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3113
TO-251 (MP-3)
2SK3113-Z
TO-252 (MP-3Z)
FEATURES
• Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating ±30 V
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K3114 |
NEC |
2SK3114 | |
2 | K3115 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
3 | K3115B |
Renesas |
N-CHANNEL POWER MOSFET | |
4 | K3116 |
NEC |
2SK3116 | |
5 | K3100G |
Champion |
3.3V Crystal Clock Oscillators | |
6 | K3102-01R |
Fuji Semiconductors |
2SK3102-01R | |
7 | K3126 |
Toshiba Semiconductor |
2SK3126 | |
8 | K3128 |
Toshiba Semiconductor |
2SK3128 | |
9 | K3140 |
Hitachi Semiconductor |
2SK3140 | |
10 | K3141 |
Renesas |
Silicon N-Channel MOS FET | |
11 | K3142 |
Hitachi Semiconductor |
2SK3142 | |
12 | K3148 |
Hitachi Semiconductor |
2SK3148 |