2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm • High efficiency:55% typ. • Source case type SOT-89 package (connected internally to source) 1.6±0.2 2 13 APPLICATION For drive stage and output stage of power ampli.
• High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm
• High efficiency:55% typ.
• Source case type SOT-89 package
(connected internally to source)
1.6±0.2 2
13
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
0.53 1.5 MAX
3.0
0.48MAX
1 : DRAIN 2 : SOURCE 3 : GATE
SOT-89
Dimensions in mm 1.5±0.1
0.4 +0.03 -0.05 MARKING
MARKING
TYPE No.
K1
LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Conditions
VDSS
Drain to source voltage
VGSS
Gate to source voltage
Pch Channel dissipation
Tc=25˚C
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2971M |
EPCOS |
IF Filter | |
2 | K2972 |
Toshiba |
2SK2972 | |
3 | K2973FC600 |
IXYS |
Medium Voltage Thyristor | |
4 | K2973FC620 |
IXYS |
Medium Voltage Thyristor | |
5 | K2973FC640 |
IXYS |
Medium Voltage Thyristor | |
6 | K2973FC650 |
IXYS |
Medium Voltage Thyristor | |
7 | K2900-01 |
Fuji Electric |
N-channel MOS-FET | |
8 | K2902-01MR |
Fuji Electric |
2SK2902-01MR | |
9 | K2915 |
Toshiba Semiconductor |
2SK2915 | |
10 | K2917 |
Toshiba Semiconductor |
2SK2917 | |
11 | K2919 |
Sanyo |
2SK2919 | |
12 | K2925 |
Hitachi |
Silicon N-Channel MOSFET |