2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S.
• Low on-resistance RDS =0.026 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D G
1. Gate 2. Drain 3. Source
1
2 3
S
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Rev.4.00 Sep 07, 2005 page 1 of 7
2SK2937
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2930 |
Hitachi Semiconductor |
2SK2930 | |
2 | K2936 |
Hitachi Semiconductor |
2SK2936 | |
3 | K2936 |
Renesas |
Silicon N Channel MOS FET | |
4 | K2938 |
Hitachi Semiconductor |
2SK2938 | |
5 | K2900-01 |
Fuji Electric |
N-channel MOS-FET | |
6 | K2902-01MR |
Fuji Electric |
2SK2902-01MR | |
7 | K2915 |
Toshiba Semiconductor |
2SK2915 | |
8 | K2917 |
Toshiba Semiconductor |
2SK2917 | |
9 | K2919 |
Sanyo |
2SK2919 | |
10 | K2925 |
Hitachi |
Silicon N-Channel MOSFET | |
11 | K2926 |
Hitachi Semiconductor |
2SK2926 | |
12 | K2929 |
Hitachi Semiconductor |
2SK2929 |