K2789 - Toshiba Semiconductor

K2789 2SK2789

2SK2789 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2789 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) l High forward transfer admittance : |Yfs| = 16 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) l Enha.

Features

s Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.08 83.3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 428 µH, IAR = 27 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 1 2002-06-27 Electrical Characteristics (Ta = 25°C) 2SK2789 Characteri.