2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2746 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS .
(typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, e.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2740 |
Rohm |
Transistors | |
2 | K2741 |
Toshiba Semiconductor |
2SK2741 | |
3 | K2742 |
Toshiba |
2SK2742 | |
4 | K2744 |
Toshiba |
2SK2744 | |
5 | K2745 |
Toshiba |
2SK2745 | |
6 | K2749 |
Toshiba |
2SK2749 | |
7 | K270 |
Aeroflex |
Silicon Zener Diodes | |
8 | K270 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
9 | K2700 |
Toshiba Semiconductor |
2SK2700 | |
10 | K2708 |
Sanken |
2SK2708 | |
11 | K2711 |
Rohm |
2SK2711 | |
12 | K2715 |
Rohm |
2SK2715 |